(China (Mainland))
Product Summary
Manufacturer:Vishay
Product Category:MOSFET
RoHS:yes
Transistor Polarity:N-Channel
Drain-Source Breakdown Voltage: 20 V
Gate-Source Breakdown Voltage: +/- 8 V
Continuous Drain Current:7.7 A
Resistance Drain-Source RDS (on):30 mOhms
Configuration:Dual
Maximum Operating Temperature:+ 150 C
Mounting Style: SMD/SMT
Package / Case: PowerPAK 1212-8
Packaging:Reel
Fall Time:50 ns
Minimum Operating Temperature:- 55 C
Power Dissipation:2.8 W
Rise Time:50 ns
Factory Pack Quantity:3000
Tradename:TrenchFET
Typical Turn-Off Delay Time:60 ns
Part # Aliases: SI7904DN-E3
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI7904DN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V N-CH |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
Si7900AEDN |
Other |
|
Data Sheet |
Negotiable |
|
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|
SI7900AEDN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 8.5A 1.5W |
Data Sheet |
|
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|
SI7900AEDN-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V |
Data Sheet |
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Si7900EDN |
Other |
|
Data Sheet |
Negotiable |
|
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SI7900EDN-T1-E3 |
Other |
|
Data Sheet |
Negotiable |
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Si7901EDN |
Other |
|
Data Sheet |
Negotiable |
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